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| VISHAY GSOT03C to GSOT36C Vishay Semiconductors ESD Protection Diode Features * Transient protection for data lines as per IEC 61000-4-2 (ESD) 15 kV (air) 8 kV (contact) IEC 61000-4-5 (Lightning) see IPPM below 1 3 2 18070 * Devices have dual diodes, which can protect two unidirectional lines with pin 3 used as a common anode connection, or a single bidirectional line between pins 1 and 2. Mechanical Data Case: SOT-23 Plastic Package Molding Compound Flammability Rating: UL 94 V-0 Terminals: High temperature soldering guaranteed: 260 C/10 sec. at terminals Weight: 8 mg Absolute Maximum Ratings Ratings at 25 C, ambient temperature unless otherwise specified Parameter Peak power 1) Test condition 8/20 s pulse 8.3 ms single half sine-wave Symbol PPK IFSM Value 300 7 Unit W A dissipation1) Forward surge current Non-repetitive current pulse and derated above TA = 25 C, for GSOT03C, GSOT04C, the peak power dissipation is 270 W Thermal Characteristics Ratings at 25 C, ambient temperature unless otherwise specified Parameter Operation and storage temperature range Test condition Symbol Tstg, TJ Value - 55 to + 150 Unit C Document Number 85824 Rev. 1, 02-Jun-03 www.vishay.com 1 GSOT03C to GSOT36C Vishay Semiconductors Electrical Characteristics TJ = 25 C unless otherwise noted Part Number Device Marking Code Rated Stand-off Voltage Minimum Breakdown Voltage @ 1 mA VWM V GSOT03C GSOT04C GSOT05C GSOT08C GSOT12C GSOT15C GSOT24C GSOT36C 1) VISHAY Maximum Clamping Voltage @ IP = 1 A1) VC V 7.0 8.5 9.8 13.4 19.0 24.0 43.0 60.0 9.0 10.5 12.5 15.0 28.0 35.0 60.0 75.0 @ IP = 5 A1) Maximum Pulse Peak Current tp = 8/20 s IPPM A 18 17 17 15 12 10 5 2 Maximum Leakage Current @ VWM ID A 125 125 100 10 2 1 1 1 Maximum Capacitance @ 0 V, 1 MHz C pF 600 600 400 350 150 100 63 60 VBR V 4.5 5.0 6.0 8.5 13.3 16.7 26.7 40 03C 04C 05C 08C 12C 15C 24C 36C 3.3 4.0 5.0 8.0 12.0 15.0 24.0 36.0 8/20 s waveform used (see figure 2) Typical Characteristics (Tamb = 25 C unless otherwise specified) 10000 100 Peak Pulse Power 8/20 s 80 PPPM - Peak Pulse Power (W) 1000 % Of Rated Power 300W, 8/20 s waveshape 60 40 100 20 10 Average Power 0 0.1 1.0 10 100 1000 10000 0 25 50 75 100 125 150 17476 td - Pulse Duration ( s ) 17478 TL - Lead Temperature C Figure 1. Non -Repetitive Peak Pulse Power vs. Pulse Time Figure 3. Power Derating 110 IPPM - Peak Pulse Current, % IRSM 100 90 80 70 60 50 40 30 20 10 0 0 5 10 15 Pulse Width (td) is defined as the point where the peak current decays to 50% of IPPM td = IPP 2 20 25 30 17477 t - Time ( s ) Figure 2. Pulse Waveform www.vishay.com 2 Document Number 85824 Rev. 1, 02-Jun-03 VISHAY Package Dimensions in Inches (mm) GSOT03C to GSOT36C Vishay Semiconductors .12 2 ( 3.1) .110 (2.8) .016 ( 0.4) 3 Top View .056 ( 1.43 ) .052 ( 1.33 ) 1 2 ma x . .004 ( 0.1) .037( 0.95) .037( 0.95) .007 ( 0.17 5) .005 ( 0.125) .045 ( 1.15) .016 ( 0.4) .016 ( 0.4) .102 ( 2.6) .094 ( 2.4) 17418 Document Number 85824 Rev. 1, 02-Jun-03 .037 ( 0.95) www.vishay.com 3 GSOT03C to GSOT36C Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. VISHAY 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 4 Document Number 85824 Rev. 1, 02-Jun-03 |
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